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APT45GP120B
1200V
POWER MOS 7 IGBT
TO-247
(R)
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
G
C
E
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
* 100 kHz operation @ 800V, 16A * 50 kHz operation @ 800V, 28A * RBSOA rated
G E C
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current
7
All Ratings: TC = 25C unless otherwise specified.
APT45GP120B UNIT
1200 20 30
@ TC = 25C Volts
100 54 170 170A @ 960V 625 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
@ TC = 25C
Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
1200 3 4.5 3.3 3.0
A nA
6-2003 050-7429 Rev C
6 3.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
2 2
ICES I GES
500 2500 100
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
1 APT45GP120B
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V I C = 45A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 45A
4 5
MIN
TYP
MAX
UNIT
3935 300 55 7.5 185 25 80 170 18 29 102 38 900 1869 904 18 29 151 79 900 3078 2254
MIN TYP MAX UNIT C/W gm ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 55 6
R G = 5 TJ = +25C
J
Inductive Switching (125C) VCC = 600V VGE = 15V I C = 45A R G = 5 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
66
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
.20 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance wtih JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7429
Rev C
6-2003
TYPICAL PERFORMANCE CURVES
90 80
IC, COLLECTOR CURRENT (A)
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
90 80
IC, COLLECTOR CURRENT (A)
APT45GP120B
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 160 140 TC=25C TC=125C
70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (VGE = 10V) 16 TC=125C TC=25C
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
14 12 10 8
IC = 45A TJ = 25C
IC, COLLECTOR CURRENT (A)
VCE=240V VCE=600V
120 100 80 60 40 20 0 0 1 2 3 45 67 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC = 90A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
TJ = -55C
TJ = 25C TJ = 125C
VCE=960V 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5 4.5 4 3.5 3 2.5 2.0 1.5 1.0 0.05 0 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
4 IC = 45A 3 IC = 22.5A 2
IC = 90A IC = 45A IC = 22.5A
1
0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50 6
25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160
IC, DC COLLECTOR CURRENT(A)
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
6-2003 050-7429 Rev C
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
TYPICAL PERFORMANCE CURVES
35
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
APT45GP120B
180 160 140 120 100 80 60 40 20 0 VCE = 600V RG = 5 L = 100 H
VGE =10V,TJ=25C VGE =15V,TJ=25C VGE =10V,TJ=125C VGE =15V,TJ=125C
30 25 20 15 10 5 0 0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 70 60
TJ = 25 or 125C,VGE = 10V
VGE= 10V VGE= 15V
VCE = 600V TJ = 25C or 125C RG = 5 L = 100 H
0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100 90 80
TJ = 125C, VGE = 10V or 15V
tr, RISE TIME (ns)
50 40 30 20 10 0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 8000
VCE = 600V L = 100 H RG = 5
tf, FALL TIME (ns)
TJ = 25 or 125C,VGE = 15V
70 60 50 40 30 20
TJ = 25C, VGE = 10V or 15V RG =5, L = 100H, VCE = 600V
RG =5, L = 100H, VCE = 600V
10 0
10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 6000
VCE = 600V L = 100 H RG = 5
EON2, TURN ON ENERGY LOSS (J)
7000 6000 5000 4000 3000 2000 1000
TJ =125C, VGE=15V
EOFF, TURN OFF ENERGY LOSS (J)
5000 4000
TJ =125C,VGE=10V
TJ = 125C, VGE = 10V or 15V
3000 2000
TJ = 25C, VGE=15V
1000 0
TJ = 25C, VGE = 10V or 15V
0 10 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 12000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V TJ = 125C
TJ = 25C, VGE=10V
0 20 30 40 50 60 70 80 90 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 8000
SWITCHING ENERGY LOSSES (J)
VCE = 600V VGE = +15V RG = 5
Eon2 90A
10000
7000 6000 5000 4000
Eon2 90A 8000
Eoff 90A
6000 Eon2 45A 4000 Eoff 45A 2000 0 Eon2 22.5A Eoff 22.5A 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
Eoff 90A 3000 2000 1000 Eoff 22.5A 0 0 Eon2 45A Eoff 45A Eon2 22.5A
Rev C
6-2003
050-7429
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000 5,000
IC, COLLECTOR CURRENT (A)
180 Cies 160 140 120 100 80 60 40 20
APT45GP120B
C, CAPACITANCE ( F)
P
1,000 500 Coes 100 50 Cres
10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
10
0 0 0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0.25
ZJC, THERMAL IMPEDANCE (C/W)
0.20
0.9
0.15
0.7
0.10
0.5 0.3
Note:
PDM t1 t2
0.05 0.1 0.05 0 10
-5
Duty Factor D = t1/t2
SINGLE PULSE 10
-4 -3 -2
Peak TJ = PDM x ZJC + TC
10 10 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
1.0
170 100
FMAX, OPERATING FREQUENCY (kHz)
0.0296 0.00782
50
Junction temp. ( "C)
Power (Watts)
0.0870
0.0150
10 5
TJ = 125C TC = 75C D = 50 % VCE = 800V RG = 5
0.0838
0.185
Case temperature
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
30 40 50 60 70 80 90 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
10
20
Fmax = min(f max1 , f max 2 ) f max1 = f max 2 = Pdiss = 0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
6-2003 050-7429 Rev C
TJ - TC R JC
APT45GP120B
APT30DF120
10% Gate Voltage T J = 125 C
V CC
IC
V CE
Collector Voltage td(on) tr
A D.U.T.
Collector Current 5% 10%
90%
5%
Figure 21, Inductive Switching Test Circuit
Switching Energy
Figure 22, Turn-on Switching Waveforms and Definitions
90%
VTEST *DRIVER SAME TYPE AS D.U.T.
Gate Voltage t d(off) 90% tf Collector Voltage T J = 125 C
A V CE IC 100uH V CLAMP B
0 Switching Energy 10% Collector Current
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
T0-247 Package Outline
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
6-2003
19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
Gate Collector Emitter
Rev C
2.21 (.087) 2.59 (.102)
050-7429
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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